| PART |
Description |
Maker |
| RM25HG-24S RM25HG-24S01 |
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE HIGH SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| CTZ3.0 CTZ2.6 CTZ2.7 CTZ2.X CTZ15 |
(CTZ2.6 - CTZ47) HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD
(CTZxx) HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD
|
CDIL
|
| RM100C1A-XXF RM100CA/C1A-XXF |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for Bipolar speed switching)
|
Mitsubishi Electric Corporation
|
| CPD83V |
Switching Diode High Speed Switching Diode Chip
|
Central Semiconductor Corp
|
| CPD83V10 |
Switching Diode High Speed Switching Diode Chip
|
Central Semiconductor Corp
|
| HSU226 |
Diodes>Switching
Silicon Schottky Barrier Diode for High Speed Switching
|
RENESAS[Renesas Electronics Corporation]
|
| GDMBD2004 |
The GDMBD2004 is designed for ultra high speed switching
SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD
GTM CORPORATION
|
| Q62702-A693 BAV74 |
From old datasheet system
Silicon Switching Diode Array (For high-speed switching Common cathode)
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| SMBD7000 SMBD700007 MMBD7000 |
Silicon Switching Diode Array For high-speed switching applications Qualified according AEC Q101
|
Infineon Technologies AG
|
| Q62702-A1030 BAV70W |
From old datasheet system
SILICON SWITCHING DIODE ARRAY (FOR HIGH SPEED SWITCHING APPLICATIONS COMMON CATHODE)
|
Siemens Semiconductor Group
SIEMENS AG
|
| BAV99W Q62702-A1051 |
From old datasheet system
Silicon Switching Diode Array (Connected in series For high speed switching applications)
|
Siemens Semiconductor Group
Infineon
|
